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<dc:title xml:lang="en">Investigation of the potential offered by gallium iron oxide thin films in terms of multiferroicity</dc:title>
<dcterms:alternative xml:lang="fr">Exporation des possibilités offertes en termes de multiferroïque par le ferrite de gallium en couches minces</dcterms:alternative>
<dc:subject xml:lang="fr">Oxydes fonctionnels en couche mince</dc:subject>
<dc:subject xml:lang="fr">Magnétoélectrique</dc:subject>
<dc:subject xml:lang="fr">Multiferroïque</dc:subject>
<dc:subject xml:lang="fr">Courants de fuite</dc:subject>
<dc:subject xml:lang="fr">Mécanismes de conduction électrique</dc:subject>
<dc:subject xml:lang="fr">Ablation laser</dc:subject>
<dc:subject xml:lang="fr">Pulvérisation cathodique</dc:subject>
<dc:subject xml:lang="en">Functional oxides thin films</dc:subject>
<dc:subject xml:lang="en">Magnetoelectric</dc:subject>
<dc:subject xml:lang="en">Multiferroic</dc:subject>
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<tef:elementdEntree autoriteExterne="031637485" autoriteSource="Sudoc">Couches minces métalliques</tef:elementdEntree>
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<tef:elementdEntree autoriteExterne="031748341" autoriteSource="Sudoc">Matériaux -- Propriétés magnétiques</tef:elementdEntree>
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<tef:elementdEntree autoriteExterne="029717752" autoriteSource="Sudoc">Pulvérisation cathodique</tef:elementdEntree>
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<dcterms:abstract xml:lang="fr">Les matériaux multiferroïques et/ou magnétoélectriques sont riches en promesses de nouvelles applications, comme par exemple des mémoires quatre états à densité accrue ou des mémoires magnétoélectriques à faible consommation d’énergie. Ces promesses restent cependant pour l’instant lettres mortes en raison du très faible nombre de matériaux présentant ces propriétés à température ambiante, et des forts courants de fuite qu’ils présentent en couches minces. Cette thèse porte sur un matériau prometteur en termes d’applications, car magnétoélectrique et ferrimagnétique à température ambiante, le ferrite de gallium de composition Ga0.6Fe1.4O3 (GFO).Nous avons démontré la possibilité de réduire les courants de fuite et moduler à volonté le type de conduction n ou p dans les couches minces de cet oxyde transparent, semi-conducteur, et magnétique, par dopage par des ions Ni2+. Une optimisation de la croissance de GFO par pulvérisation cathodique a par ailleurs montré qu’il était possible de le déposer sous champ électrique, ce qui ouvre d’intéressantes perspectives pour l’optimisation de la polarisation électrique des couches minces.</dcterms:abstract>
<dcterms:abstract xml:lang="en">The multiferroic and/or magnetoelectric materials are full of promises in terms of new applications, such as for example higher density four state memories or lower power consuming magnetoelectric memories. These promises are however actually put off because too few materials present these properties at room temperature and because their thin films present too high leakage currents. This thesis focusses on a room temperature magnetoelectric and ferrimagnetic material promising in terms of applications, the gallium ferrite Ga0.6Fe1.4O3 (GFO).We have demonstrated the possibility to strongly reduce the leakage currents and perfectly tune from n to p the conduction type in transparent, semi-conducting, and magnetic thin films of GFO through Ni2+ doping. The optimization of the growth of GFO thin films by sputtering has moreover shown the possibility of deposition under an electric field, which opens ways to control of the electric polarization of the films.</dcterms:abstract>
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