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<dc:title xml:lang="en">Modelization of single-photon avalanche Diode (SPAD) for the design of integrated imager pixels in advanced CMOS technology</dc:title>
<dcterms:alternative xml:lang="fr">Modélisation de diode à avalanche à photon unique (SPAD) pour le design de pixels d’imageurs intégrés en technologie CMOS avancée</dcterms:alternative>
<dc:subject xml:lang="fr">Diode</dc:subject>
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<dc:subject xml:lang="fr">Modélisation compacte</dc:subject>
<dc:subject xml:lang="fr">Avalanche</dc:subject>
<dc:subject xml:lang="fr">Ionisation par impact</dc:subject>
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<tef:elementdEntree autoriteExterne="027675211" autoriteSource="Sudoc">SPAD (système informatique)</tef:elementdEntree>
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<dcterms:abstract xml:lang="fr">Les applications des imageurs à base de matrices de pixels utilisant des diodes à avalanche de type SPAD intégrées en technologie CMOS ont connu une forte croissance au cours de la dernière décennie, avec des applications en imagerie et en détection dans divers domaines tels que le biomédical, l'environnement, l'industrie et l'automobile. La modélisation de la diode SPAD dans un environnement de conception microélectronique est nécessaire pour répondre aux besoins des concepteurs d'imageurs CMOS à base de matrices de SPAD. Un modèle distribué basé sur une structure en boucles a été conçu pour simuler le phénomène d'ionisation par impact, au cœur du fonctionnement du dispositif. La validation expérimentale de ce modèle a été réalisée grâce à une structure de test développée conjointement par STMicroelectronics et le laboratoire ICube. Cette validation a permis de calibrer le modèle afin d'obtenir un comportement fidèle au dispositif réel.</dcterms:abstract>
<dcterms:abstract xml:lang="en">Applications based on Pixel matrix imagers using CMOS technology and SPAD-type avalanche diodes have significantly expanded in the last decade with applications in biomedical imaging, environmental monitoring, industrial settings, and automotive systems. The SPAD diode operates in a unique mode compared to most semiconductor devices, requiring a model for simulation in a microelectronic design environment to meet the needs of CMOS imager designers using SPAD arrays. A distributed model, based on a loop structure reflecting the impact ionization phenomenon at the core of the device’s operation, has been developed to address these requirements. Experimental validation of this model was carried out through a robust test structure developed in collaboration between STMicroelectronics and the ICube laboratory. Calibration of the model was achieved using this test structure and the obtained transient measurements to ensure accurate representation of the actual device’s behavior.</dcterms:abstract>
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