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<dc:title xml:lang="en">Interfacial coupling and electrical control of light-matter interactions in van der Waals heterostructures made of two-dimensional semiconductors and graphene</dc:title>
<dcterms:alternative xml:lang="fr">Couplage interfacial et contrôle électrique des interactions lumière-matière dans des hétérostructures de van der Waals constituées de semi-conducteurs bidimensionnels et de graphène</dcterms:alternative>
<dc:subject xml:lang="fr">Matériaux bidimensionnels</dc:subject>
<dc:subject xml:lang="fr">Graphène</dc:subject>
<dc:subject xml:lang="fr">Dichalcogénures de métaux de transition</dc:subject>
<dc:subject xml:lang="fr">Hétérostructures de van der Waals</dc:subject>
<dc:subject xml:lang="fr">Excitons</dc:subject>
<dc:subject xml:lang="fr">Transfert de charge et d'énergie</dc:subject>
<dc:subject xml:lang="fr">Couplage interfacial</dc:subject>
<dc:subject xml:lang="fr">Spectroscopie de photoluminescence</dc:subject>
<dc:subject xml:lang="fr">Spectroscopie Raman</dc:subject>
<dc:subject xml:lang="en">Two-dimensional materials</dc:subject>
<dc:subject xml:lang="en">Graphene</dc:subject>
<dc:subject xml:lang="en">Transition metal dichalcogenides</dc:subject>
<dc:subject xml:lang="en">Van der Waals heterostructures</dc:subject>
<dc:subject xml:lang="en">Excitons</dc:subject>
<dc:subject xml:lang="en">Charge and energy transfer</dc:subject>
<dc:subject xml:lang="en">Interfacial coupling</dc:subject>
<dc:subject xml:lang="en">Photoluminescence spectroscopy</dc:subject>
<dc:subject xml:lang="en">Raman spectroscopy</dc:subject>
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<tef:elementdEntree autoriteExterne="027870294" autoriteSource="Sudoc">Transfert de charge</tef:elementdEntree>
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<dcterms:abstract xml:lang="fr">Nous avons réalisé une étude fondamentale des interactions en champ proche dans des hétérostructures constituées de graphène et de dichalcogénures de métaux de transition (TMD). Afin d'étudier les mécanismes de transfert de charge et d’énergie, des monocouches de MoSe2 ont été couplées à des feuillets de graphène. Nous avons sondé les états excitoniques de MoSe2 par spectroscopie de photoluminescence (PL) et de photoluminescence résolue dans le temps (TRPL). Nos mesures révèlent que les interactions entre le MoSe2 et le graphène sont à très courte portée (~ 1 nm), ce qui suggère une contribution importante des processus de transfert par effet tunnel. Pour contrôler la photoluminescence d’une monocouche de MoSe2 nous avons utilisé un verre ionique (LaF3) en tant que substrat et matériau de grille. L’évolution, en fonction de la densité de porteurs de charge, de la photoluminescence de MoSe2 et de l’hétérostructure graphène/MoSe2, ainsi que des modes Raman du graphène a permis d’extraire des informations importantes sur les voies de recombinaison excitonique, les processus de transfert de charge et les alignements de bandes entre MoSe2 et le graphène.</dcterms:abstract>
<dcterms:abstract xml:lang="en">We have performed a fundamental study of the near-field interactions in heterostructures made from graphene and transition metal dichalcogenides (TMD), with the aim to control the light emission characteristics of TMD monolayers. In order to investigate charge and energy transfer mechanisms, heterostructures made from monolayer MoSe2 covering graphene of different thicknesses (N= 1 to 6 layers) were fabricated. The excitonic manifold of MoSe2 was probed through photoluminescence (PL) and time-resolved photoluminescence (TRPL) spectroscopy. Our work reveals that the interactions between MoSe2 and graphene are very short range (~ 1 nm), suggesting a prominent contribution from charge tunnelling mediated processes. To control the photoluminescence from MoSe2 through charge doping, we have used an ionic glass (LaF3) as a substrate and gating material. The dependence of the PL of MoSe2 and graphene/MoSe2 regions and of the Raman features of graphene on the charge carrier density revealed details about exciton recombination pathways, charge transfer processes and band offsets.</dcterms:abstract>
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